Senior RF GaN Devices Engineer

General Description:

HRL Laboratories offers an industry leading suite of high performance GaN based device technologies and is seeking to expand our RF Devices team. The successful candidate will help define the next generation of GaN based semiconductor devices and introduce new process capabilities.

Essential Duties:

Support to conceive, develop, and execute device research programs that push GaN and related materials into higher frequency, power and efficiency ranges. Opportunities range from developing newer materials such as N-polar GaN and ultra-wide bandgap semiconductors to optimizing existing millimeter wave production technologies. 

Design new epitaxial structures to be grown by MBE or MOCVD.  

Design new fabrication methods to be fabricated within our onsite fab to improve device performance and yield

Develop devices for flip chip or 3DHI integration requirements. 

Review, summarize and interpret RF measurement data, and create actionable learning for device or design improvements

Interface closely with internal and government customers to shape future device efforts. 

Work collaboratively within a team environment, and to mentor junior staff

Work with internal circuit designers and subsystem designers to understand device requirements to support next-generation electronic system and subsystem designs. 

Required Skills:

PhD in electrical engineering or related field with 5+ years of post-graduate experience in GaN HEMTs. This experience should span functions including design, modeling, processing, and characterization of GaN HEMTs. Specific requirements include: 

Practical and theoretical understanding of RF electronic devices 

Experience with TCAD simulations in commercial packages.

Understanding of device reliability

Deep understanding of device fabrication methods and the impact on device performance and yield

Proven track record of leading experimental electronic device research and development programs 

Hands-on experience with writing, winning and executing research projects.

Must have authored scientific publications and given technical presentations. 

Able to pursue difficult technical subjects independently, design experiments, analyze data, and provide solutions.

Able to produce technical presentations and reports & communicate effectively with colleagues and customers.

Excellent written and verbal communications skills

Required Education:

BS, MS, or Ph.D. with experience in semiconductor physics, material science, electrical engineering. 

Physical Requirements:

Able to work within a semiconductor cleanroom environment.

Special Requirements:

US Citizenship

Ability to obtain and maintain a security clearance

Compensation:

The base salary range for this full-time position is $145,745 - $186,688 + bonus + benefits.

Our salary ranges are determined by role, level, and location. The range displayed on each job posting reflects the minimum and maximum target for new hire salaries for the position. Within the range, individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training. Your recruiter can share more about the specific salary range during the hiring process. Please note that the compensation details listed reflect the base salary only, and do not include potential bonus or benefits.

We are proud to be an EEO/AA employer M/F/D/V. We maintain a drug-free workplace and perform pre-employment substance abuse testing.